Front End CMP Slurries

FUJIFILM Electronic Materials Front End CMP slurries are designed for devices that utilize advanced transistor technologies such as high-K metal gates, advanced dielectrics, 3-dimensional FinFET transistors, and self-aligned contacts. Various product platforms are available to meet a broad range of process and technology requirements.

FUJIFILM Electronic Materials FEOL CMP slurries’ features:

  • Multiple platforms with different baseline material removal selectivities
  • Tunable selectivities within each platform
  • Exceptionally low defectivity by design
  • Competitive cost of ownership

Available Front End CMP Slurries:

  • FSL1600C
    • Next-generation Poly Open Polish (POP) slurry for gate last/ replacement metal gate (RMG) integrations for Logic & Memory
    • Baseline of non-selective removal of nitride, oxide, and good stop on poly-silicon
    • All 3 dielectrics’ rates and selectivities are tunable
    • High purity colloidal silica and ultra-pure chemicals for ultra-low defectivity
    • Concentrated formulation for attractive cost of ownership
  • FSL1531C
    • Poly-silicon slurry with stop on various dielectrics and metals
    • Very high and intermediate poly-silicon rates possible. High Ti/ TiN liner rates
    • TMAH-free EHS benign chemistry & high purity colloidal silica deliver ultra-low defectivity
    • Highly dilutable slurry offerings for attractive cost of ownership
  • FSL1700C
    • Silicon Oxide slurry with stop on silicon nitride
    • Market-leading “silica – based” Shallow Trench Isolation (STI) slurry
    • Changes the industry - standard for STI from ceria to silica
    • Very good stop on silicon nitride on blanket and patterned wafers
    • Slurry can further stop on other metal (such as W, Co) or dielectric (such as poly-silicon) films
    • Ultra-low defectivity (vs. ceria) due to use of high purity colloidal silica
    • Critical slurry for defectivity improvement in STI applications for advanced logic and memory
    • Concentrated formulation for attractive cost of ownership
  • FSL1820C
    • Silicon Nitride slurry with stop on silicon oxide
    • Nitride slurry for “Reverse – STI” applications such as SAC Cap, HM, Etch-Stop, etc.
    • Slurry can further stop on other metal (such as W, Co) or dielectric (such as poly-silicon) films
    • High selectivity of silicon nitride to silicon oxide on blanket and patterned wafers
  • FSL1400C
    • Metal (Ti, Zr, Hf, Al) Oxide slurry with non-selective rates to dielectrics
    • Tunable rates and selectivities of metal oxides and silicon-based dielectrics
    • Proprietary removal rate enhancing chemistries to obtain high film rates
    • High purity colloidal silica based dilutable formulations for ultra-low defectivity & attractive CoO
  • FSL1450C
    • Metal (Ti, Zr, Hf, Al) Oxide slurry with stop on dielectrics
    • Good stop on silicon nitride, oxide, SiGe and poly-silicon films
    • Tunable rates and selectivities of metal oxides and silicon-based dielectrics
    • High purity colloidal silica based highly dilutable formulations for low defectivity & attractive CoO
  • FSL3400C
    • Tungsten slurry with either stop on dielectrics or non-selective to dielectrics
    • Good stop on silicon nitride, oxide, SiGe and poly-silicon films for stop on dielectric applications
    • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
    • High purity colloidal silica based highly dilutable formulations for ultra-low defectivity

Contact Us for more information

FUJIFILM Electronic Materials advanced Front End CMP slurries are designed for use in the critical early stages of device fabrication, removing materials in in a controlled manner to provide the ideal surface for subsequent steps in the production flow.