Front End CMP Slurries

FUJIFILM Planar Solutions Front End CMP slurries are designed for devices that utilize advanced transistor technologies such as high-K metal gates, advanced dielectrics, 3-dimensional FinFET transistors, and self-aligned contacts. Various product platforms are available to meet a broad range of process and technology requirements.

FUJIFILM Planar Solutions Front End CMP slurries feature:

  • Multiple platforms with different baseline material removal selectivities
  • Tuneable selectivities within each platform
  • Exceptionally low defectivity by design
  • Competitive cost of ownership

Available Front End Barrier CMP Slurries:

  • GPM-300S
    • High volume commercial slurry for Poly Opening Polish (POP) dummy gate exposure for gate last integration schemes
    • High purity colloidal silica
    • Excellent performance on hard CMP pads with very low defectivity
  • FSL16xxC
    • Next-generation Poly Opening Polish (POP) slurry for gate last integrations
    • Baseline of non-selective removal of nitride, oxide, and polysilicon
    • Tuneable removal selectivities
    • High purity colloidal silica
    • Ultra low defectivity
    • Concentrated formulation for attractive cost of ownership
  • FSL18xxC
    • Used in the formation of self-aligned contacts and other advanced CMP process applications
    • High silicon nitride removal rates with high selectivity to oxide
    • Tuneable removal selectivities
    • High purity colloidal silica
    • Ultra low defectivity
    • Concentrated formulation for attractive cost of ownership

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FUJIFILM Planar Solutions advanced Front End CMP slurries are designed for use in the critical early stages of device fabrication, removing materials in in a controlled manner to provide the ideal surface for subsequent steps in the production flow.

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